Nexperia Gallium Nitride: the power density and efficiency required for EV power electronics

As vehicle electrification increases, so does the requirement of power semiconductors to provide highly efficient power conversion at increasingly higher switching frequency. A move from traditional Si to WBG, in particular Power GaN FETs, coupled with Cu clip-bonded package technology instead of traditional wire bonded D2 and TO packages can address the demands of electrification of the powertrain. Dr Dilder Chowdhury from Nexperia addresses the key challenges and benefits of moving from silicon to GaN across a number of applications such as on-board-chargers (EV charging), DC/DC converters and motor drive traction inverters (xEV traction inverters), including a look at how proven Cu clip SMD packaging increases the robustness and reliability for the most demanding EV designs.

The webinar, hosted by Charged on March 31, 2021 at 11 AM ET, will include a live Q&A session.

Register now – IT’S FREE!

Products You May Like

Articles You May Like

Lamborghini Aventador successor, 2024 Mercedes-Benz AMG C 63, 2023 BMW Alpina XB7: This Week’s Top Photos
Report: Iran blocks SpaceX Starlink website after Elon Musk activated internet for Iranians
Electrofit’s new crate features a permanent magnet synchronous motor and a built-in inverter
BMW CFO sees ‘very good order’ situation with EVs, projects 400,000 pure electric vehicle sales
Faraday Future (FFIE) resolves investor dispute, raises up to $100M to launch FF 91

Leave a Reply

Your email address will not be published.